Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS

Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS

Low-frequency noise in hot-carrier degraded nMOSFETs

This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deu...

Gate and drain low frequency noise in HfO2 NMOSFETs

Gate and drain current noise investigations are performed on nMOS transistors with HfO2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density Nt(EF) ranging from 3 to 7 10 eV cm. These values are about 50 times higher than for SiO2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter KGC...

Low-Frequency Noise in High-k LaLuO3/TiN MOSFETs

Low-frequency noise (LFN) characterization of high-k LaLuO3/TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders ...

Novel trends in SOI: UTBOX SOI and direct silicon bonding technologies

Recent trends in device design bring a need for SOI wafers with ultra thin BOX below 100A. Difficulties in production of UTBOX SOI wafer by the Smart CutTM technology are highlighted. New process of internal BOX dissolution allows to overcome interface defectivity problems and results in high quality UTBOX and DSB wafers. Mechanism of internal BOX dissolution is presented together with the resu...